GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies

نویسنده

  • Otto Berger
چکیده

As one of the major suppliers in the area of High Frequency (HF) components, the Siemens Semiconductor HF Product Division stands for a continuous commitment to innovative Technologies and Products combined with a volume strategy. The Siemens Technology and Product Roadmap is directed to complete RF system solutions and device kits as well as standard and custom specific components in enhanced Si, GaAs and Hetero Materials (SiGe HBT, GaAs HEMT, GaAs HBT). A core competence is the fabrication of RF components in Surface Mounted Technology (SMT). We produce high volume discretes in Si & GaAs, MMICs (Monolithic Microwave IC’s) in Si & GaAs, and finally Fast Logic Circuits in enhanced Si technologies (fig. 1)

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Improving the Linearity and Efficiency of RF Power Amplifiers

Agrowing number of semiconductor technologies are being applied to RF power transistor applications. These technologies include Si LDMOS FET, SiGe HBT, InGaP HBT, GaAs MESFET, AlGaAs pHEMT, SiC MESFET and AlGaN/GaN HEMT. The dependencies of linearity and efficiency of such technologies are often common, such as transconductance derivatives, capacitance variations, breakdown effects and parasiti...

متن کامل

NONLINEAR MODELING OF TRAPPING AND THER- MAL EFFECTS ON GaAs AND GaN MESFET/HEMT DE- VICES

A novel nonlinear model for MESFET/HEMT devices is presented. The model can be applied to low power (GaAs) and high power (GaN) devices with equal success. The model provides accurate simulation of the static (DC) and dynamic (Pulsed) I-V characteristics of the device over a wide bias and ambient temperature range (from −70◦C to +70◦C) without the need of an additional electro-thermal sub-circu...

متن کامل

Will GaAs Survive for Wireless PA's ??

Silicon based technologies, SiGe HBT and CMOS, have captured almost all of the cellular handset application space with the exception of the RF power amplifier. In time will they also push GaAs out of these sockets? For cellular base stations Si LDMOS is the dominant technology, but as wireless applications move to higher frequencies, will GaAs displace Si LDMOS or lose out to the rapidly develo...

متن کامل

CMP: The Access to Advanced Low Costy Manufacturing

CMP aims at providing Universities, Research Laboratories and Industries with the possibility to have their integrated circuits projects fabricated for prototyping and low volume production. Presently, users are serviced for CMOS double layer poly/double layer metal (DLP/DLM) 0.8, DLM/TLM 0.6μ, DLP/4LM 0.35μ, SLP/6LM 0.25μ, SLP/6LM 0.18μ, BiCMOS DLP/DLM 0.8μ, SiGe HBT 0.8μ DLP/DLM, SiGe HBT 0.3...

متن کامل

18 English

High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1999